A low-power V-band CMOS low-noise amplifier using current-sharing technique

被引:0
作者
Yang, Hong-Yu [1 ]
Lin, Yo-Sheng [1 ]
Chen, Chi Chen [1 ]
机构
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan
关键词
low power; V-band; CMOS; low-noise amplifier;
D O I
10.1002/mop.23523
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power-consumption 53-GHz (V-band) low-noise amplifier (LNA) using standard 0.13 mu m CMOS technology is reported. To achieve sufficient gain, this LNA is composed of,four cascaded common-source stages. Current-sharing technique is adopted in the third and four stages to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain at the design frequency. This LNA achieved voltage gain (A(v)) of 14 dB, very low noise figure (NF) of 6.13 dB, input referred 1-dB compression point (P1dB-in) of -20 dBm, and input third-order inter-modulation point (IIP3) of -9 dBm at 53 GHz. It consumed only a very small dc power of 10.56 mW. In addition, the chip area was only 0.91 x 0.58 mm(2), including all the test pads and bypass capacitors. (c) 2008 Wiley Periodicals, Inc.
引用
收藏
页码:1876 / 1879
页数:4
相关论文
共 6 条
[1]  
[Anonymous], IEEE INT SOL STAT CI
[2]   A low power, high gain LNA topology [J].
Cha, CY ;
Lee, SG .
2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2000, :420-423
[3]  
CHIN HW, 2005, IEEE T MICROW THEORY, V53, P813
[4]   Millimeter-wave CMOS design [J].
Doan, CH ;
Emami, S ;
Niknejad, AM ;
Brodersen, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :144-155
[5]   A NEW CRITERION FOR LINEAR 2-PORT STABILITY USING A SINGLE GEOMETRICALLY DERIVED PARAMETER [J].
EDWARDS, ML ;
SINSKY, JH .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2303-2311
[6]   K-Band low-noise amplifiers using 0.18 μm CMOS technology [J].
Yu, KW ;
Lu, YL ;
Chang, DC ;
Liang, V ;
Chang, MF .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2004, 14 (03) :106-108