Densification and mechanical behavior of HfC and HfB2 fabricated by spark plasma sintering

被引:163
作者
Sciti, Diletta [1 ]
Guicciardi, Stefano [1 ]
Nygren, Mats [2 ]
机构
[1] Inst Sci & Technol Ceram, CNR ISTEC, I-48018 Faenza, Italy
[2] Stockholm Univ, Dept Inorgan Chem, Arrhenius Lab, SE-10691 Stockholm, Sweden
关键词
D O I
10.1111/j.1551-2916.2007.02248.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hafnium diboride (HfB2)- and hafnium carbide (HfC)-based materials containing MoSi2 as sintering aid in the volumetric range 1%-9% were densified by spark plasma sintering at temperatures between 1750 degrees and 1950 degrees C. Fully dense samples were obtained with an initial MoSi2 content of 3 and 9 vol% at 1750 degrees-1800 degrees C. When the doping level was reduced, it was necessary to raise the sintering temperature in order to obtain samples with densities higher than 97%. Undoped powders had to be sintered at 2100 degrees-2200 degrees C. For doped materials, fine microstructures were obtained when the thermal treatment was lower than 1850 degrees C. Silicon carbide formation was observed in both carbide- and boride-based materials. Nanoindentation hardness values were in the range of 25-28 GPa and were independent of the starting composition. The nanoindentation Young's modulus and the fracture toughness of the HfB2-based materials were higher than those of the HfC-based materials. The flexural strength of the HfB2-based material with 9 vol% of MoSi2 was higher at 1500 degrees C than at room temperature.
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页码:1433 / 1440
页数:8
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