Room temperature UV emission of MgxZn1-xO films

被引：51
作者：
Jin, YB
Zhang, B [1 ]
Yang, SM
Wang, YZ
Chen, J
Zhang, HH
Huang, CH
Cao, CQ
Cao, H
Chang, RPH
机构：
[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Natl Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China
[4] Northwestern Univ, Evanston, IL 60208 USA
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 06期
基金：
中国国家自然科学基金;
关键词：
thin film; semiconductors; X-ray scattering; luminescence;
D O I：
10.1016/S0038-1098(01)00244-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger bandedge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：409 / 413
页数：5
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