Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

被引：8

作者：

Li, N. ^{[1
]}

Li, W. L. ^{[1
]}

Zhang, S. Q. ^{[1
]}

Fei, W. D. ^{[1
]}

机构：

[1] Harbin Inst Technol, Dept Mat Phys & Chem, Harbin 150001, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 15期

关键词：

K0.5Na0.5NbO3; Thin films; Post-annealing; Dielectric properties; CERAMICS;

D O I：

10.1016/j.tsf.2011.01.130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 degrees C, 600 degrees C, 700 degrees C. The post-annealing treatment was introduced at 550 degrees C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5070 / 5073

页数：4

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