Photoluminescence Study of Copper Selenide Thin Films

被引：9

作者：

Urmila, K. S. ^{[1
]}

Asokan, Namitha T. ^{[1
]}

Pradeep, B. ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Solid State Phys Lab, Kochi 682022, Kerala, India

来源：

OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: INTERNATIONAL CONFERENCE ON LIGHT | 2011年 / 1391卷

关键词：

Copper Selenide; Thin films; Reactive evaporation; XRD; Photoluminescence; DEPOSITION;

D O I：

10.1063/1.3643675

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350nm are deposited on glass substrate at a temperature of 498K +/- 5K and pressure of 10(-5) mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

引用

页数：3

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