Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

被引：61

作者：

Hung, Ting-Hsiang ^{[1
]}

Esposto, Michele ^{[1
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 16期

关键词：

aluminium compounds; gallium compounds; high electron mobility transistors; impurity scattering; MISFET; phonons; two-dimensional electron gas; FIELD-EFFECT TRANSISTORS; PHONON-SCATTERING; DIPOLE SCATTERING; MOBILITY; OXIDE; AL2O3; GASES;

D O I：

10.1063/1.3653805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5 x 10(12) cm(-2) and dielectric/AlGaN interface charge density is above 5 x 10(12) cm(-2). The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3653805]

引用

页数：3

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