Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

被引：0

作者：

Zhao, Yanli ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Optoelect Sci & Engn, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2007年 / 6782卷

关键词：

avalanche photodiodes (APDs); multiplication; InP;

D O I：

10.1117/12.745506

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (V-br). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.

引用

页数：9

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