Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

被引：46

作者：

Peng, Cheng ^{[1
,2
]}

Wu, Liangcai ^{[1
,2
]}

Rao, Feng ^{[1
,2
]}

Song, Zhitang ^{[1
,2
]}

Zhou, Xilin ^{[1
,2
]}

Zhu, Min ^{[1
,2
]}

Liu, Bo ^{[1
,2
]}

Yao, Dongning ^{[1
,2
]}

Feng, Songlin ^{[1
,2
]}

Yang, Pingxiong ^{[3
]}

Chu, Junhao ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China

[3] E China Normal Univ, Dept Elect, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

来源：

SCRIPTA MATERIALIA | 2011年 / 65卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Phase change memory; GeTeN film; Power consumption; Data retention; RAMAN-SCATTERING; MEMORY; TRANSITION;

D O I：

10.1016/j.scriptamat.2011.04.033

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The crystallization temperature of GeTe film increases markedly from 187 to 372 degrees C as a result of 9.81 at.% nitrogen doping, and a rhombohedral-rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10(5) cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 degrees C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：327 / 330

页数：4

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