The influence of constant electric field on the characteristics of the direct magnetoelectric effect in composite structures with single crystal piezoelectric layers was observed. The effect was measured in the structures with langatate and catangasite piezoelectric layers and amorphous magnetic alloy metglas as a ferromagnetic layer. The value of magnetoelectric voltage coefficient of 146 V/(Oe.cm) was obtained for the langatate-based structure and value of 1.35 V/(Oe.cm) for the catangasite-based structure. For the langatate-metglas structure, electrical field of 20 kV/cm resulted in a change in the generated voltage up to 63%, in the quality factor Q up to 76%, and provided linear variation of the resonance frequency up to 16 Hz. Electrical field control of magnetoelectric effect characteristics can be used to design new magnetoelectric devices. (C) 2017 Elsevier B.V. All rights reserved.
机构:
Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Nan, Ce-Wen
Bichurin, M. I.
论文数: 0引用数: 0
h-index: 0
机构:
Novgorod State Univ, Inst Elect & Informat Syst, Veliky Novgorod 173003, RussiaTsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Bichurin, M. I.
Dong, Shuxiang
论文数: 0引用数: 0
h-index: 0
机构:
Virginia Technol, Dept Mat Sci & Engn, Blacksburg, VA 24061 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Dong, Shuxiang
Viehland, D.
论文数: 0引用数: 0
h-index: 0
机构:
Virginia Technol, Dept Mat Sci & Engn, Blacksburg, VA 24061 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Viehland, D.
Srinivasan, G.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48309 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USAOakland Univ, Dept Phys, Rochester, MI 48307 USA
Sreenivasulu, G.
Fetisov, L. Y.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USA
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, RussiaOakland Univ, Dept Phys, Rochester, MI 48307 USA
Fetisov, L. Y.
Fetisov, Y. K.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USA
Moscow State Univ Radio Engn Elect & Automat, Moscow 119454, RussiaOakland Univ, Dept Phys, Rochester, MI 48307 USA
Fetisov, Y. K.
Srinivasan, G.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USAOakland Univ, Dept Phys, Rochester, MI 48307 USA
机构:
Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Nan, Ce-Wen
Bichurin, M. I.
论文数: 0引用数: 0
h-index: 0
机构:
Novgorod State Univ, Inst Elect & Informat Syst, Veliky Novgorod 173003, RussiaTsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Bichurin, M. I.
Dong, Shuxiang
论文数: 0引用数: 0
h-index: 0
机构:
Virginia Technol, Dept Mat Sci & Engn, Blacksburg, VA 24061 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Dong, Shuxiang
Viehland, D.
论文数: 0引用数: 0
h-index: 0
机构:
Virginia Technol, Dept Mat Sci & Engn, Blacksburg, VA 24061 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Viehland, D.
Srinivasan, G.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48309 USATsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USAOakland Univ, Dept Phys, Rochester, MI 48307 USA
Sreenivasulu, G.
Fetisov, L. Y.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USA
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, RussiaOakland Univ, Dept Phys, Rochester, MI 48307 USA
Fetisov, L. Y.
Fetisov, Y. K.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USA
Moscow State Univ Radio Engn Elect & Automat, Moscow 119454, RussiaOakland Univ, Dept Phys, Rochester, MI 48307 USA
Fetisov, Y. K.
Srinivasan, G.
论文数: 0引用数: 0
h-index: 0
机构:
Oakland Univ, Dept Phys, Rochester, MI 48307 USAOakland Univ, Dept Phys, Rochester, MI 48307 USA