Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions

被引:0
作者
Zhu, T
Zhan, WS
Shen, F
Zhang, Z
Xiang, XH
Landry, G
Xiao, JQ
机构
[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnet, Beijing 100080, Peoples R China
[2] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
[3] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
来源
CHINESE PHYSICS | 2003年 / 12卷 / 06期
关键词
tunnelling magnetoresistance; magnetic tunnel junctions;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, l(tc), can be obtained to be about 0.8 nm for CoFe materials.
引用
收藏
页码:665 / 668
页数:4
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