A Doping-Dependent Subthreshold Current Model for Short-Channel Symmetric Double-Gate (DG) MOSFETs

被引：7
作者：
Tiwari, Pramod Kumar [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Ctr Res Microelect CRME, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2010年 / 5卷 / 01期
关键词：
Subthreshold Current; Symmetric DG MOSFET; Parabolic Potential Approximation; Drift-Diffusion Carrier Transportation; THRESHOLD VOLTAGE; COMPACT MODEL; SOI MOSFETS; CHARGE;
D O I：
10.1166/jno.2010.1070
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a subthreshold current model for the uniformly doped short-channel symmetric double-gate (DG) MOSFET is presented to understand the behavior of the device in the subthreshold regime. Parabolic potential approximation has been used to obtain the channel potential of the device by solving the two dimensional Poisson's equation. The diffusion current equation is then utilized to model the subthreshold current of the device. The effect of volume inversion in the relatively low-doped DG-MOS devices is also included in the present model. The model results are validated by comparing with the simulation data obtained by using the commercially available ATLAS (TM) Device Simulator. The present model shows a reasonably good accuracy of the subthreshold current for a wide range of device parameters and drain voltages.
引用
收藏
页码：82 / 88
页数：7
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