Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED

被引：26

作者：

Cester, A. ^{[1
]}

Bari, D. ^{[1
]}

Framarin, J. ^{[1
]}

Wrachien, N. ^{[1
]}

Meneghesso, G. ^{[1
]}

Xia, S. ^{[2
]}

Adamovich, V. ^{[2
]}

Brown, J. J. ^{[2
]}

机构：

[1] Univ Padua, DEI, Padua, Italy

[2] Universal Display Corp, Ewing, NJ 08618 USA

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

DEGRADATION;

D O I：

10.1016/j.microrel.2010.07.114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the reliability of Organic Light-Emitting Diodes (OLEDs) featuring a NPD hole transport layer and Alq(3) electron transport layer, subjected to thermal and electrical stress. The main results can be summarized as follows: temperature alone (without bias) cannot induce device degradation at least up to 60 degrees C; during constant current stress at 120 mA/cm(2), temperature can strongly enhance the degradation rate, even though the temperature increases only by 40 degrees C; the degradation is more severe in the central part of the device where the self-heating is larger. (C) 2010 Elsevier Ltd. All rights reserved.

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页码：1866 / 1870

页数：5

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