Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated conductors

被引：27

作者：

Sathyamurthy, S ^{[1
]}

Paranthaman, MP

Zhai, HY

Kang, SK

Christen, HM

Cantoni, C

Goyal, A

Martin, PM

机构：

[1] Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[3] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期

关键词：

all-solution buffer layers; coated conductors; lanthanum zirconate; single buffer layer;

D O I：

10.1109/TASC.2003.811940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sol-gel processing of lanthanum zirconate (La2Zr2O7 - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at. % W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm(2) at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high I-c YBCO films on them will be discussed.

引用

页码：2658 / 2660

页数：3

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