Optimization of precursor deposition for evaporated Cu2ZnSnS4 solar cells

被引：4
作者：
Cui, Hongtao [1 ]
Li, Wei [1 ]
Liu, Xiaolei [1 ]
Song, Ning [1 ]
Lee, Chang-Yeh [1 ]
Liu, Fangyang [1 ]
Hao, Xiaojing [1 ]
机构：
[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 118卷 / 03期
基金：
澳大利亚研究理事会;
关键词：
THIN-FILMS; SULFURIZATION; LAYER;
D O I：
10.1007/s00339-014-8806-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of three kinds of precursor depositions on the performance of corresponding Cu2ZnSnS4 solar cells has been investigated, which includes evaporation of stacking metal layers (Mo/Zn/Cu/Sn), co-evaporation of metal elements (Mo/(Zn,Cu,Sn)) and co-evaporation of metals together with a small amount of sulfur (Mo/(Zn,Cu,Sn,S)) . It is found that Mo/(Zn,Cu,Sn) leads to large grain absorber and the best open circuit voltage V-OC, short circuit current density J(SC) and efficiency; Mo/Zn/Cu/Sn produces a porous structure with small grain size which causes lowest shunt resistance, V-OC, J(SC) and efficiency; Mo/(Zn,Cu,Sn,S) results in a dense film with small grain size which induces highest shunt resistance (R-SH) and fill factor (FF); similar to 200 nm thick MoS2 layer is formed during the sulfurization.
引用
收藏
页码：893 / 899
页数：7
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