J-ramp on sub-3nm dielectrics: Noise as a breakdown criterion

被引：13

作者：

Alers, GB ^{[1
]}

Weir, BE ^{[1
]}

Frei, MR ^{[1
]}

Monroe, D ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761648

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An alternate criterion of failure for very thin oxides is proposed that can reliably detect the occurrence of both soft breakdown and hard breakdown during accelerated stress tests. We show that an increase in current noise that occurs at oxide breakdown can be detected rapidly with commercial test equipment even when no discernable voltage drop can be observed. This test can be implemented with very minor software changes and can detect both hard and soft breakdowns for 2- 6nm oxides.

引用

页码：410 / 413

页数：4

共 3 条

[1] Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides [J].

Depas, M ;

Nigam, T ;

Heyns, MM .

SOLID-STATE ELECTRONICS, 1997, 41 (05) :725-728

[2] Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides [J].

Jackson, JC ;

Robinson, T ;

Oralkan, O ;

Dumin, DJ ;

Brown, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (03) :1033-1038

[3] Ultra-thin gate dielectrics: They break down, but do they fail? [J].

Weir, BE ;

Silverman, PJ ;

Monroe, D ;

Krisch, KS ;

Alam, MA ;

Alers, GB ;

Sorsch, TW ;

Timp, GL ;

Baumann, F ;

Liu, CT ;

Ma, Y ;

Hwang, D .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :73-76

← 1 →