Thermoelectric properties of the Tix(Zr0.5Hf0.5)1-XNiSn half-Heusler compounds

被引：7
作者：
Shutoh, N [1 ]
Sakurada, S [1 ]
机构：
[1] Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源：
TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年
关键词：
D O I：
10.1109/ICT.2003.1287512
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds, Ti-x(Zr0.5Hf0.5)(1-x)NiSn (X = 0-0.7) is reported. The sintered polycrystalline samples were obtained by hot-pressing the milled powder after arc melting. It was shown that the substitution of Ti for (Zr,Hf) resulted in a significant reduction of the thermal conductivity as low as 3.1 W/mK at room temperature. We also found the remarkable enhancement of the Seebeck coefficient by Ti substitution. Furthermore, the doping with Sb on the Sri sites for (Ti,Zr,Hf)NiSn leaded to reduction in electric resistivity and, accordingly, to enhancement of the power factor. In the Sb doped (Ti,Zr,Hf)NiSn compounds, Ti-0.5(Zr0.5Hf0.5)(0.5)NiSn0.998Sb0.002, the dimensionless figure of merit, ZT increased with increasing temperature showing its maximum value 1.5 at 700 K. Because of their potential, it is expected that these materials are interesting in thermoelectric power generation.
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页码：312 / 315
页数：4
相关论文
共 10 条
  • [1] NARROW-BAND IN THE INTERMETALLIC COMPOUNDS TINISN, ZRNISN, HFNISN
    ALIEV, FG
    KOZYRKOV, VV
    MOSHCHALKOV, VV
    SCOLOZDRA, RV
    DURCZEWSKI, K
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1990, 80 (03): : 353 - 357
  • [2] GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN
    ALIEV, FG
    BRANDT, NB
    MOSHCHALKOV, VV
    KOZYRKOV, VV
    SKOLOZDRA, RV
    BELOGOROKHOV, AI
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02): : 167 - 171
  • [3] TiNiSn: A gateway to the (1,1,1) intermetallic compounds
    Cook, BA
    Harringa, JL
    Tan, ZS
    Jesser, WA
    [J]. PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, : 122 - 127
  • [4] A new class of materials with promising thermoelectric properties: MNiSn (M = Ti, Zr, Hf)
    Hohl, H
    Ramirez, AP
    Kaefer, W
    Fess, K
    Thurner, C
    Kloc, C
    Bucher, E
    [J]. THERMOELECTRIC MATERIALS - NEW DIRECTIONS AND APPROACHES, 1997, 478 : 109 - 114
  • [5] Efficient dopants for ZrNiSn-based thermoelectric materials
    Hohl, H
    Ramirez, AP
    Goldmann, C
    Ernst, G
    Wölfing, B
    Bucher, E
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) : 1697 - 1709
  • [6] JEITSCHKO W, 1970, METALL TRANS, V1, P3159
  • [7] BAND-GAP AND STABILITY IN THE TERNARY INTERMETALLIC COMPOUNDS NISNM (M=TI,ZR,HF) - A FIRST-PRINCIPLES STUDY
    OGUT, S
    RABE, KM
    [J]. PHYSICAL REVIEW B, 1995, 51 (16): : 10443 - 10453
  • [8] Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method
    Shen, Q
    Zhang, LM
    Chen, LD
    Goto, T
    Hirai, T
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2001, 20 (24) : 2197 - 2199
  • [9] Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds
    Shen, Q
    Chen, L
    Goto, T
    Hirai, T
    Yang, J
    Meisner, GP
    Uher, C
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4165 - 4167
  • [10] Transport properties of pure and doped MNiSn (M=Zr, Hf)
    Uher, C
    Yang, J
    Hu, S
    Morelli, DT
    Meisner, GP
    [J]. PHYSICAL REVIEW B, 1999, 59 (13): : 8615 - 8621
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