K-band and millimeter-wave MMICs for emerging commercial wireless applications

被引：24

作者：

Tokumitsu, T ^{[1
]}

机构：

[1] Fujitsu Quantum Devices Ltd, Yamanashi 4093883, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 11期

关键词：

commercial wireless; flip-chip; K-band; low-noise amplifier; millimeter wave; MMIC; pHEMT; power amplifier; three-dimensional MMIC; voltage-controlled oscillator;

D O I：

10.1109/22.963138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recent K-band monolithic-microwave integrated-circuit (NMC) technologies for the local multipoint distribution service systems and novel MMIC technologies for potential low-cost millimeter-wave MMICs are presented in this paper via a review of Fujitsu Quantum Devices Limited technology. The devices being demonstrated are a 23-26-GHz 2-W power amplifier module with a broad-band driver amplifier, a 19-33-GHz miniature low-noise amplifier, a frequency multiplier by four for K-band local oscillators, a flip-chip MMIC module for radar application, and three-dimensional MMIC image-rejection harmonic mixers. Through these devices, the recent trend of design and fabrication methodologies for the K-band and millimeter-wave devices will be described.

引用

页码：2066 / 2072

页数：7

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