High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization

被引：43

作者：

Tsai, Chun-Chien ^{[1
,2
]}

Lee, Yao-Jen ^{[3
]}

Wang, Jyh-Liang ^{[1
,2
]}

Wei, Kai-Fang ^{[1
,2
]}

Lee, I-Che ^{[1
,2
]}

Chen, Chih-Chung ^{[4
]}

Cheng, Huang-Chung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

[4] Chunghwa Picture Tubes Ltd, Tao Yuan, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期

关键词：

excimer laser crystallization; double-gate; thin film transistor (TFT);

D O I：

10.1016/j.sse.2007.10.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 mu m) had the field-effect-mobility exceeding 400 cm(2)/V s, on/off current ratio higher than 10(8), superior short-channel characteristics and higher current drivability. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：365 / 371

页数：7

共 40 条

[1] 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration [J].

Banerjee, K ;

Souri, SJ ;

Kapur, P ;

Saraswat, KC .

PROCEEDINGS OF THE IEEE, 2001, 89 (05) :602-633

[2]

Colinge J. P., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P595, DOI 10.1109/IEDM.1990.237128

[3] Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification [J].

Crowder, MA ;

Carey, PG ;

Smith, PM ;

Sposili, RS ;

Cho, HS ;

Im, JS .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :306-308

[4]

DAVID E, 2003, IEEE T ELECT DV, V50, P802

[5] ANALYSIS OF DOUBLE-GATE THIN-FILM TRANSISTOR [J].

FARRAH, HR ;

STEINBERG, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :69-+

[6] Capillary waves in pulsed excimer laser crystallized amorphous silicon [J].

Fork, DK ;

Anderson, GB ;

Boyce, JB ;

Johnson, RI ;

Mei, P .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2138-2140

[7]

GUARINI KW, 2001, IEDM, P415

[8] High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization [J].

Hara, A ;

Takei, M ;

Takeuchi, F ;

Suga, K ;

Yoshino, K ;

Chida, M ;

Kakehi, T ;

Ebiko, Y ;

Sano, Y ;

Sasaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A) :1269-1276

[9] Selective single-crystalline-silicon growth at the pre-defined active regions of TFTs on a glass by a scanning CW laser irradiation [J].

Hara, A ;

Takeuchi, F ;

Saski, N .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :209-212

[10]

Hatano M., 2002, SID 02, P158

← 1 2 3 4 →