Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

被引：40

作者：

Choi, YK ^{[1
]}

Ha, DW ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 09期

关键词：

mobility enhancement; nano-CMOS; quantum confinement of inversion charge; raised S/D; selective Ge; threshold voltage shift; ultrathin body;

D O I：

10.1109/55.944335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 mn show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.

引用

页码：447 / 448

页数：2

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