New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss

被引：16

作者：

Zhou, Di ^{[1
,3
]}

Pang, Li-Xia ^{[2
]}

Guo, Jing ^{[1
,3
]}

Wu, Ying ^{[1
,3
]}

Zhang, Gao-Qun ^{[1
,3
]}

Dai, Wei ^{[1
,3
]}

Wang, Hong ^{[1
,3
]}

Yao, Xi ^{[1
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China

[2] Xian Technol Univ, Lab Thin Film Tech & Opt Test, Xian 710032, Peoples R China

[3] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 09期

关键词：

SCHEELITE;

D O I：

10.1111/j.1551-2916.2011.04727.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work, a pure monoclinic phase of BaNd2(MoO4)(4) and BaSm2(MoO4)(4) was formed at 850 degrees C and 600 degrees C, respectively, via a solid-state reaction method. The ceramic samples were found to be well densified at 960 degrees C. Dense and homogeneous microstructures were revealed from the scanning electron microscopy. The microwave dielectric behaviors were studied as a function of sintering temperature and characterized in the temperature range 25 degrees C-120 degrees C. The best properties were obtained in ceramics sintered at 960 degrees C with a permittivity similar to 11.7, a Q x f value of 45 000 GHz and a temperature coefficient of frequency about -41 ppm/degrees C for BaNd2(MoO4)(4) ceramic at 9.9 GHz, and a permittivity similar to 11.8, a Q x f value of 20 000 GHz, and a temperature coefficient of frequency about -34 ppm/degrees C for BaSm2(MoO4)(4) ceramic at 9.7 GHz, respectively.

引用

页码：2800 / 2803

页数：4

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