Structure and Optical properties of ZnO thin film preparation using RF magnetron sputtering

被引：0

作者：

Quan, Shanyu ^{[1
]}

Yang, Linmei ^{[1
]}

Liu, Cong ^{[1
]}

Zhang, Xudong ^{[1
]}

机构：

[1] ShenYang Univ Technol, Shenyang 130021, Peoples R China

来源：

OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷

关键词：

ZnO thin Films; RF Sputtering; Transmittance spectra; Band gap energy; Refractive index;

D O I：

10.4028/www.scientific.net/MSF.663-665.377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this study is to obtain high-quality zinc oxide thin films by reactive radiofrequency (rf) magnetron sputtering. The thin films were prepared at constant total gas pressure, with different oxygen and argon contents. The ZnO samples were characterized by several methods. From XRD measurements it was confirmed that ZnO films are c-axis oriented, the line width and intensity are sensitive to O-2/Ar gas pressure. All films exhibited excellent transmission (in excess of 70 %) in the visible range with a steep fall off in transmission at 425 nm. From the absorbance measurements the optical band-gap energy was extrapolated according the transmission spectrum. It shows that the optical band gap of the films increased from 3.233 eV to 3.288 eV with increase in the oxygen concentrations from 20 % to 70 %. Refractive indexes of the obtained thin films were carried out in this study.

引用

页码：377 / 380

页数：4

共 14 条

[1] The optical, structural and morphological properties of ultrasonically sprayed ZnO: Mn films [J].

Akyuz, I. ;

Kose, S. ;

Atay, F. ;

Bilgin, V. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (12) :1620-1626

[2] Conversion of zinc oxide nanobelts into superlattice-structured nanohelices [J].

Gao, PX ;

Ding, Y ;

Mai, WJ ;

Hughes, WL ;

Lao, CS ;

Wang, ZL .

SCIENCE, 2005, 309 (5741) :1700-1704

[3] ZnO thin films produced by magnetron sputtering [J].

Gao, W ;

Li, ZW .

CERAMICS INTERNATIONAL, 2004, 30 (07) :1155-1159

[4] Preferred orientation and piezoelectricity in sputtered ZnO films [J].

Gardeniers, JGE ;

Rittersma, ZM ;

Burger, GJ .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7844-7854

[5] Buffer layers in Cu(In,Ga)Se2 solar cells and modules [J].

Hariskos, D ;

Spiering, S ;

Powalla, M .

THIN SOLID FILMS, 2005, 480 :99-109

[6] Metal-semiconductor transition in undoped ZnO films deposited by spray pyrolysis [J].

Kavasoglu, Nese ;

Kavasoglu, A. Sertap .

PHYSICA B-CONDENSED MATTER, 2008, 403 (17) :2807-2810

[7] Fabrication of ZnO thin film diode using laser annealing [J].

Lee, SY ;

Shim, ES ;

Kang, HS ;

Pang, SS ;

Kang, JS .

THIN SOLID FILMS, 2005, 473 (01) :31-34

[8] ZnO thin films with DC and RF reactive sputtering [J].

Li, ZW ;

Gao, W .

MATERIALS LETTERS, 2004, 58 (7-8) :1363-1370

[9] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[10]

NAUSE J, 2005, COMPOUND SEMICONDUCT, V11, P29

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