Fabrication and optical properties of ZnO quantum dots

被引:1
|
作者
Zhang, X. H. [1 ]
Chua, S. J. [1 ]
Yong, A. M. [1 ]
Chow, S. Y. [1 ]
Yang, H. Y. [2 ]
Lau, S. P. [2 ]
Yu, S. F. [2 ]
Sun, X. W. [2 ]
机构
[1] Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源
SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES | 2008年 / 31卷
关键词
ZnO; quantum dots; photoluminescence;
D O I
10.4028/www.scientific.net/AMR.31.71
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and time-integrated photoluminescence. The photo luminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.
引用
收藏
页码:71 / +
页数:2
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