Fabrication and optical properties of ZnO quantum dots

被引：1

作者：

Zhang, X. H. ^{[1
]}

Chua, S. J. ^{[1
]}

Yong, A. M. ^{[1
]}

Chow, S. Y. ^{[1
]}

Yang, H. Y. ^{[2
]}

Lau, S. P. ^{[2
]}

Yu, S. F. ^{[2
]}

Sun, X. W. ^{[2
]}

机构：

[1] Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES | 2008年 / 31卷

关键词：

ZnO; quantum dots; photoluminescence;

D O I：

10.4028/www.scientific.net/AMR.31.71

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and time-integrated photoluminescence. The photo luminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.

引用

页码：71 / +

页数：2

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