Nonvolatile unipolar resistive switching behavior of amorphous BiFeO3 films

被引：16

作者：

Deng, Haoliang ^{[1
,2
]}

Zhang, Ming ^{[1
]}

Li, Tong ^{[3
]}

Wei, Jizhou ^{[1
]}

Chu, Shangjie ^{[1
]}

Du, Minyong ^{[1
]}

Yan, Hui ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

[2] Tianjin Univ Technol & Educ, Sch Sci, Tianjin 300222, Peoples R China

[3] Tianjin Univ Technol & Educ, Sch Elect Engn, Tianjin 300222, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 639卷

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

Amorphous BiFeO3; Thin films; Resistive switching; Oxygen vacancies; RESISTANCE;

D O I：

10.1016/j.jallcom.2015.03.110

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous BiFeO3 thin films were grown on an indium tin oxide glass substrate using RF magnetron sputtering at room temperature. The resistive switching behavior of amorphous BiFeO3 thin films was investigated. The Au/amorphous BiFeO3/indium tin oxide device exhibited the stable unipolar resistive switching behavior with a substantial resistance ratio (larger than 10(2)) between low and high resistance states and the excellent retention performance. The low resistance state exhibited a linear Ohmic behavior, while the high resistance state conduction could be ascribed to the trap controlled space-charge limited conduction mechanism. Based on the X-ray photoelectron spectroscopy, the observed resistive switching behavior was mainly attributed to the electric field induced migration of oxygen vacancies. (C) 2015 Elsevier B. V. All rights reserved.

引用

页码：235 / 238

页数：4

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