Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs

被引：17

作者：

Mao, LF ^{[1
]}

Tan, CH ^{[1
]}

Xu, MZ ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 03期

关键词：

roughness; tunneling; metal-oxide-semiconductor structure;

D O I：

10.1016/S0038-1101(01)00038-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interface roughness effects on direct tunneling current in ultrathin MOSFETs are investigated by numerical analysis. The interface roughness is described in terms of Gauss distribution. It is shown that the effects of rough surface on tunneling current cannot be neglected while tunneling occurs in the regime of direct tunneling. The effects increase exponentially with oxide thickness or applied voltage across oxide decreasing. This means that the effects become more and more important while the direct tunneling current takes up the main contribution to the gate leakage current. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：531 / 534

页数：4

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