Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 Cycles

被引：20

作者：

Banerjee, Writam ^{[1
]}

Karpov, Ilya, V ^{[2
]}

Agrawal, Ashish ^{[2
]}

Kim, Seonghun ^{[3
]}

Lee, Seungwoo ^{[1
]}

Lee, Sangmin ^{[1
]}

Lee, Donghwa ^{[3
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Intel Corp, Components Res, Hillsboro, OR 97124 USA

[3] Pohang Univ Sci & Technol POSTECH, Computat Nanomat Design Lab, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9371960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate driving parameters to control the hybrid-filament (HF) in Ag-based threshold switching (TS) devices. To achieve statistically improved TS behavior, we engineer the nucleation energy barrier, shape of HF and steric repulsion force during TS-operation. Finally, we demonstrate TS with extremely low OFF current (0.1 pA), extremely high selectivity (> 10(9)) with stable threshold voltage (< 3% fluctuation), high endurance (> 10(9)) with stable steep subthreshold slope similar to 1 mV/dec, and high device-yield in Ag based devices.

引用

页数：4

共 12 条

[1] Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions [J].