Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 Cycles

被引：19

作者：

Banerjee, Writam ^{[1
]}

Karpov, Ilya, V ^{[2
]}

Agrawal, Ashish ^{[2
]}

Kim, Seonghun ^{[3
]}

Lee, Seungwoo ^{[1
]}

Lee, Sangmin ^{[1
]}

Lee, Donghwa ^{[3
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Intel Corp, Components Res, Hillsboro, OR 97124 USA

[3] Pohang Univ Sci & Technol POSTECH, Computat Nanomat Design Lab, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9371960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate driving parameters to control the hybrid-filament (HF) in Ag-based threshold switching (TS) devices. To achieve statistically improved TS behavior, we engineer the nucleation energy barrier, shape of HF and steric repulsion force during TS-operation. Finally, we demonstrate TS with extremely low OFF current (0.1 pA), extremely high selectivity (> 10(9)) with stable threshold voltage (< 3% fluctuation), high endurance (> 10(9)) with stable steep subthreshold slope similar to 1 mV/dec, and high device-yield in Ag based devices.

引用

页数：4

共 12 条

[1] Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions
Banerjee, Writam
Hwang, Hyunsang
[J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (12)
[2] Fujii S., 2019, IEEE S VLSI TECHN DI, pT188
[3] Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
Grisafe, Benjamin
Jerry, Matthew
Smith, Jeffrey A.
Datta, Suman
[J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) : 1602 - 1605
[4] Evidence of field induced nucleation in phase change memory
Karpov, I. V.
Mitra, M.
Kau, D.
Spadini, G.
Kryukov, Y. A.
Karpov, V. G.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (17)
[5] CMOS compatible low-power volatile atomic switch for steep-slope FET devices
Lim, Seokjae
Yoo, Jongmyung
Song, Jeonghwan
Woo, Jiyong
Park, Jaehyuk
Hwang, Hyunsang
[J]. APPLIED PHYSICS LETTERS, 2018, 113 (03)
[6] Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions
Sassine, Gilbert
Nail, Cecile
Blaise, Philippe
Sklenard, Benoit
Bernard, Mathieu
Gassilloud, Remy
Marty, Aurelie
Veillerot, Marc
Vallee, Christophe
Nowak, Etienne
Molas, Gabriel
[J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02)
[7] Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
Song, Jeonghwan
Woo, Jiyong
Yoo, Jongmyung
Chekol, Solomon Amsalu
Lim, Seokjae
Sung, Changhyuck
Hwang, Hyunsang
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) : 4763 - 4767
[8] Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
Song, Jeonghwan
Woo, Jiyong
Prakash, Amit
Lee, Daeseok
Hwang, Hyunsang
[J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) : 681 - 683
[9] Sukla N., 2016, IEEE IEDM, P866
[10] Sung C, 2019, S VLSI TECH, pT62, DOI 10.23919/VLSIT.2019.8776527

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Highly-stable (&lt; 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 Cycles

Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 Cycles