Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

被引：81

作者：

Huang, Xiao-Di ^{[1
]}

Li, Yi ^{[1
]}

Li, Hao-Yang ^{[1
]}

Xue, Kan-Hao ^{[1
]}

Wang, Xingsheng ^{[1
]}

Miao, Xiang-Shui ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Memristor; resistive switching; bilayer structure; forming-free; thermal stability; SELF-COMPLIANCE; DEVICES; RRAM;

D O I：

10.1109/LED.2020.2977397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through oxygen profile engineering, we fabricated W/AlOx/Al2O3/Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (similar to 10(3) @100K, similar to 10(3) @298K, and similar to 80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature (10(8) @100K, 10(10) @298K, and 10(7) @400K) is demonstrated, to the best of our knowledge.

引用

页码：549 / 552

页数：4

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