Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

被引：117

作者：

Collett, J ^{[1
]}

Vuillaume, D ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, CNRS, Dept Phys Isen, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 18期

关键词：

D O I：

10.1063/1.122552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the realization and functioning of a hybrid (organic/silicon) nanometer-size field effect transistor (nano-FET) having a gate length of 25 nm. The gate insulator is an organic self-assembled monolayer (SAM) of alkyltrichlorosilanes (similar to 2 nm thick). We have used densely packed SAMs with functionalized end groups (-CH3, -CH=CH2, -COOH) that all exhibit reduced leakage current density (10(-8)-10(-5) A/cm(2)). This nano-FET is free of punchthrough down to 50 nm, and shows a good field effect behavior at 25 nm. This demonstrates the compatibility of these SAMs with semiconductor device processes and their wide capability for applications in nanometer-scale electronics. (C) 1998 American Institute of Physics. [S0003-6951(98)04444-1]

引用

页码：2681 / 2683

页数：3