Synthesis of Cu2O from CuO thin films: Optical and electrical properties

被引：195

作者：

Murali, Dhanya S. ^{[1
]}

Kumar, Shailendra ^{[2
]}

Choudhary, R. J. ^{[3
]}

Wadikar, Avinash D. ^{[3
]}

Jain, Mahaveer K. ^{[1
]}

Subrahmanyam, A. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

[2] RR Ctr Adv Technol, Indus Synchrotrons Utilizat Div, Indore 452013, Madhya Pradesh, India

[3] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

AIP ADVANCES | 2015年 / 5卷 / 04期

关键词：

COPPER-OXIDE SEMICONDUCTORS;

D O I：

10.1063/1.4919323

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5x10(-6) mbar at 700 K for 1 hour) of magnetron sputtered (at 300 K) CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm), optical transmission 72% (at 600 nm) and Hall mobility 51 cm(2)/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS). CuO thin films show a significant band bending downwards (due to higher hole concentration) than Cu2O thin films. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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