Pt(x angstrom)/Co(5 angstrom)/Pt(10 angstrom) trilayer films with x = 5, 8, and 10 angstrom were deposited on naturally oxidized Si (111) x = 8 and 10 angstrom and also affected the growth mode of the trilayer film. The Pt particles preferably grew in the neighborhood of the Ti cluster, giving rise to a relatively smooth layer with a fcc fiber texture (111) structure. By contrast, the absence of a Ti underlayer led to a clustered, relatively rough, and randomly oriented nano-crystalline growth. Differences in the growth mode appeared as intensity loss in X-ray photoelectron spectroscopy spectra due to shadowing effects. Our results indicate that traceable amount of underlayer can change the magnetic anisotropy of the film by influencing the film growth. (C) 2021 The Japan Society of Applied Physics
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
An, Gwang Guk
Lee, Ja Bin
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Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Lee, Ja Bin
Yang, Seung Mo
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Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Yang, Seung Mo
Kim, Jae Hong
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h-index: 0
机构:
Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Kim, Jae Hong
Chung, Woo Seong
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h-index: 0
机构:
Hanyang Univ, Dept Elect & Comp Engn, Nano Quantum Elect Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Chung, Woo Seong
Yoon, Kap Soo
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Yoon, Kap Soo
Hong, Jin Pyo
论文数: 0引用数: 0
h-index: 0
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Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Hong, Jin Pyo
[J].
AIP ADVANCES,
2015,
5
(02):
[2]
[Anonymous], 2017, SENSORS-BASEL, DOI DOI 10.3390/S17122743
机构:
Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, France
Bersweiler, M.
论文数: 引用数:
h-index:
机构:
Dumesnil, K.
Lacour, D.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, France
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
An, Gwang Guk
Lee, Ja Bin
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Lee, Ja Bin
Yang, Seung Mo
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Yang, Seung Mo
Kim, Jae Hong
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Kim, Jae Hong
Chung, Woo Seong
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect & Comp Engn, Nano Quantum Elect Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Chung, Woo Seong
Yoon, Kap Soo
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Yoon, Kap Soo
Hong, Jin Pyo
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Dept Phys, Res Inst Nat Sci, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea
Hong, Jin Pyo
[J].
AIP ADVANCES,
2015,
5
(02):
[2]
[Anonymous], 2017, SENSORS-BASEL, DOI DOI 10.3390/S17122743
机构:
Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, France
Bersweiler, M.
论文数: 引用数:
h-index:
机构:
Dumesnil, K.
Lacour, D.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, FranceUniv Lorraine, Inst Jean Lamour, UMR CNRS 7198, BP 70239, F-54506 Vandoeuvre Les Nancy, France