Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

被引:7
作者
An, Kunsik [1 ]
Lee, Ho-Nyun [2 ]
Cho, Kwan Hyun [1 ]
Lee, Seung-Woo [3 ]
Hwang, David J. [4 ]
Kang, Kyung-Tae [1 ]
机构
[1] Korea Inst Ind Technol KITECH, Micro Nano Proc Grp, Ansan 15588, South Korea
[2] Korea Inst Ind Technol KITECH, Surface Technol Grp, Incheon 21999, South Korea
[3] Hanyang Univ, Dept Mech Engn, Seoul 04763, South Korea
[4] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA
关键词
laser assisted plasma enhanced chemical vapor deposition; silicon nitride; low temperature encapsulation; silane photolysis; ArF excimer laser; SILICON-NITRIDE GATE; DIELECTRICS; SILANE;
D O I
10.3390/mi11010088
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 degrees C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).
引用
收藏
页数:11
相关论文
共 34 条