Metal/nonpolar m-plane ZnO contacts with and without thin Al2O3 interlayer deposited by atomic layer deposition

被引：0
作者：
Kim, Hogyoung [1 ,2 ]
Kim, Dong Ha [3 ]
Ryu, Sungyeon [3 ]
Choi, Byung Joon [3 ]
机构：
[1] Seoul Natl Univ Sci & Technol Seoultech, Dept Visual Opt, Seoul 01811, South Korea
[2] Seoul Natl Univ Sci & Technol Seoultech, Convergence Inst Biomed Engn & Biomat, Seoul 01811, South Korea
[3] Seoul Natl Univ Sci & Technol Seoultech, Dept Mat Sci & Engn, Seoul 01811, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 20期
关键词：
AG SCHOTTKY CONTACTS; BULK ZNO; FILMS; SAPPHIRE; DEFECTS; DIODES; POLAR; GAN;
D O I：
10.1007/s10854-017-7370-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using the temperature dependent current-voltage (I-V) measurements, the electrical properties of Au/nonpolar m-plane ZnO Schottky diodes with an Al2O3 interlayer prepared by atomic layer deposition (ALD) was investigated. With an Al2O3 interlayer, it was found to have higher barrier heights and higher rectifying ratio. Modified Richardson plots produced effective Richardson constants of 30.0 and 37.6 Acm(-2)K(-2) for the samples with and without Al2O3 interlayer, respectively, which are similar to the theoretical value of 32.0 Acm(-2)K(-2) for n-ZnO. Scanning transmission electron microscope (STEM) results showed that the oxygen-contained layer on ZnO surface degraded the film quality of subsequently deposited Al2O3 layer. In addition, the inter-diffusion of Au and Al atoms into ZnO subsurface region also modulated the electrical properties of Au/ZnO contacts.
引用
收藏
页码：14974 / 14980
页数：7
相关论文
共 27 条
[1]   Bulk transport measurements in ZnO: The effect of surface electron layers [J].
Allen, M. W. ;
Swartz, C. H. ;
Myers, T. H. ;
Veal, T. D. ;
McConville, C. F. ;
Durbin, S. M. .
PHYSICAL REVIEW B, 2010, 81 (07)
[2]   Electrical characterization of defects introduced during metallization processes in n-type germanium [J].
Auret, F. D. ;
Coelho, S. M. M. ;
van Rensburg, P. J. Janse ;
Nyamhere, C. ;
Meyer, W. E. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (5-6) :348-353
[3]   Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy [J].
Cagin, E. ;
Yang, J. ;
Wang, W. ;
Phillips, J. D. ;
Hong, S. K. ;
Lee, J. W. ;
Lee, J. Y. .
APPLIED PHYSICS LETTERS, 2008, 92 (23)
[4]   Nonpolar a-plane p-type GaN and p-n junction diodes [J].
Chakraborty, A ;
Xing, H ;
Craven, MD ;
Keller, S ;
Mates, T ;
Speck, JS ;
DenBaars, SP ;
Mishra, UK .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) :4494-4499
[5]   Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers [J].
Chauhan, Lalit ;
Gupta, Suman ;
Jaiswal, Piyush ;
Bhat, Navakanta ;
Shivashankar, S. A. ;
Hughes, G. .
THIN SOLID FILMS, 2015, 589 :264-267
[6]   POINT-DEFECT INJECTION INTO SILICON DUE TO LOW-TEMPERATURE SURFACE MODIFICATIONS [J].
CHRISTENSEN, C ;
PETERSEN, JW ;
LARSEN, AN .
APPLIED PHYSICS LETTERS, 1992, 61 (12) :1426-1428
[7]   Origin of green luminescence in hydrothermally grown ZnO single crystals [J].
Cizek, J. ;
Valenta, J. ;
Hruska, P. ;
Melikhova, O. ;
Prochazka, I. ;
Novotny, M. ;
Bulir, J. .
APPLIED PHYSICS LETTERS, 2015, 106 (25)
[8]   Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar) [J].
Coppa, BJ ;
Davis, RF ;
Nemanich, RJ .
APPLIED PHYSICS LETTERS, 2003, 82 (03) :400-402
[9]   Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].
Gorla, CR ;
Emanetoglu, NW ;
Liang, S ;
Mayo, WE ;
Lu, Y ;
Wraback, M ;
Shen, H .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602
[10]   Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy [J].
Han, S. K. ;
Hong, S. K. ;
Lee, J. W. ;
Lee, J. Y. ;
Song, J. H. ;
Nam, Y. S. ;
Chang, S. K. ;
Minegishi, T. ;
Yao, T. .
JOURNAL OF CRYSTAL GROWTH, 2007, 309 (02) :121-127
123