Statistical Analysis of the Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Phi(b)) and donar concentration (N-d) values are determined by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. From I-V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (R-S) and shunt resistance (R-Sh ) are also evaluated from the I-V characteristics. Furthermore, Norde and Cheung's methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C-V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71x10(17) cm(-3) with a normal deviation of 0.018x10(17) cm(-3), respectively.