Study of optical, photoelectrical and gas sensitive properties of porous silicon

被引：0
作者：
Smyntyna, VA [1 ]
Vashpanov, YA [1 ]
机构：
[1] Odessa State Univ, Dept Expt Phys, UA-270100 Odessa, Ukraine
来源：
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSIS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS 1997 | 1998年 / 3359卷
关键词：
porous silicon; photosensitivity; electric parameters; electromotive force; ammonia adsorption;
D O I：
10.1117/12.306279
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoelectronic properties of samples of porous silicon received by method of anodic electrochemical etching of monocrystalline silicon in electrolytes on the base of hydrofluoric acid are investigated. Wide spectral photosensitivity from infra-red to ultraviolet of spectrum area on series of received structures is found out.The physical mechanism of photosensitivity is discussed. The electronic parameters of porous silicon samples under gas adsorption were investigated. It was opend that the ammonia adsorption changes electrical conductivity of porous silicon samples on constant and variable current of measurement. In microporous asymmetrical structures we observed electromotive force on contacts under ammonia adsorption. The physical mechanism of adsorption of ammonia is connected with interaction dipolar molecules ammonia with double electric layer on surface of porous silicon.
引用
收藏
页码：553 / 557
页数：5
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