Quantum Hall effect in semiconductor systems with quantum dots and antidots

被引：2

作者：

Beltukov, Ya M. ^{[1
]}

Greshnov, A. A. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197376, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

MAGNETIC-FIELD; STATES; INAS;

D O I：

10.1134/S1063782615040077

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T similar to 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.

引用

页码：483 / 491

页数：9

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