Thermal stability of 1.55 μm quantum well laser structures grown by gas-source molecular beam epitaxy

被引：2

作者：

Gordon, BE ^{[1
]}

Thompson, DA ^{[1
]}

Robinson, BJ ^{[1
]}

Lee, ASW ^{[1
]}

机构：

[1] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 103卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

epitaxy of thin films; molecular beam epitaxy; indium phosphide; quantum well structure; annealing;

D O I：

10.1016/S0921-5107(03)00238-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Full and partial InGaAsP quantum well, laser structures grown by gas source molecular beam epitaxy, have been subjected to various thermal anneal treatments. Room temperature photoluminescence has been used to measure changes in the quantum well emission wavelength. In all cases, the wavelength decreases (blue-shifts) after the anneal treatment and the details of this blue-shift with anneal time and temperature have been used to establish how specific grown in defects and defects produced through surface dissociation can be used to explain the thermally induced changes. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：227 / 232

页数：6

共 12 条

[1] STRIPE-GEOMETRY QUANTUM-WELL HETEROSTRUCTURE ALXGA1-XAS-GAAS LASERS DEFINED BY DEFECT DIFFUSION [J].

DEPPE, DG ;

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :510-512

[2] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].

GOSELE, U ;

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1980, 23 (04) :361-368

[3] CONTROLLED DISORDERING OF COMPRESSIVELY STRAINED INGAASP MULTIPLE-QUANTUM WELLS UNDER SIO-P ENCAPSULANT AND APPLICATION TO LASER-MODULATOR INTEGRATION [J].

HAMOUDI, A ;

RAO, EVK ;

KRAUZ, P ;

RAMDANE, A ;

OUGAZZADEN, A ;

ROBEIN, D ;

THIBIERGE, H .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5638-5641

[4] Study of quantum well intermixing caused by grown-in defects [J].

Haysom, JE ;

Aers, GC ;

Raymond, S ;

Poole, PJ .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :3090-3092

[5] FRENKEL PAIRS IN LOW-TEMPERATURE ELECTRON-IRRADIATED INP - X-RAY-DIFFRACTION [J].

KARSTEN, K ;

EHRHART, P .

PHYSICAL REVIEW B, 1995, 51 (16) :10508-10519

[6] Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP [J].

Lee, ASW ;

MacKenzie, M ;

Thompson, DA ;

Bursik, J ;

Robinson, BJ ;

Weatherly, GC .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3199-3201

[7] Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping [J].

Lee, JH ;

Si, SK ;

Moon, YB ;

Yoon, EJ ;

Kim, SJ .

ELECTRONICS LETTERS, 1997, 33 (13) :1179-1181

[8] Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers [J].

Liu, XF ;

Qiu, BC ;

Ke, ML ;

Bryce, AC ;

Marsh, JH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (09) :1141-1143

[9] IMPURITY INDUCED DISORDERING OF GAINAS QUANTUM-WELLS WITH BARRIERS OF ALGAINAS OR OF GAINASP [J].

MARSH, JH ;

BRADSHAW, SA ;

BRYCE, AC ;

GWILLIAM, R ;

GLEW, RW .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :973-978

[10] QUANTUM-WELL INTERMIXING [J].

MARSH, JH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :1136-1155

← 1 2 →