New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs

被引：19

作者：

Irace, Andrea ^{[1
]}

Breglio, Giovanni ^{[1
]}

Spirito, Paolo ^{[1
]}

机构：

[1] Univ Naples Federico 2, Dept Elect & Telecommun Engn, I-80125 Naples, Italy

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a novel 3D electro-thermal simulation tool capable of taking into account also particular driving strategies of the electron device, as it may be the case of smart power MOSFETs where a control logic interacts with the power section and controls its dissipated power and temperature. As an example, a thermal shutdown circuit, capable of reading the temperature on chip and switching the device off if the latter reaches dangerous values, usually embedded within smart power devices used in automotive applications to drive direction light or small motors/actuators, is simulated to validate our approach. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1696 / 1700

页数：5