Fast power cycling protocols implemented in an automated test bench dedicated to IGBT module ageing

被引:30
作者
Forest, Francois [1 ]
Rashed, Amgad [1 ]
Huselstein, Jean-Jacques [1 ]
Martire, Thierry [1 ]
Enrici, Philippe [1 ]
机构
[1] Univ Montpellier 2, Inst Elect & Syst, F-34095 Montpellier 5, France
关键词
Bond wire ageing; IGBT modules; Power cycling; Real-time monitoring; JUNCTION TEMPERATURE; RELIABILITY; LIFETIME;
D O I
10.1016/j.microrel.2014.09.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents fast test protocols for ageing IGBT modules in power cycling conditions, and a monitoring device that tracks the on-state voltage V-CE and junction temperature T-j IGBTs during ageing test operations. This device is implemented in an ageing test bench described in previous papers, but which has since been modified to perform fast power cycling tests. The fast test protocols described here use the thermal variations imposed on IGBT modules by a test bench operating under Pulse Width Modulation conditions. This test bench reaches the maximal values of power cycling frequencies attainable with a given module packaging in order to optimize test duration. The measurement device monitors V-CE throughout the ageing test that is needed to detect possible degradations of wire bonds and/or emitter metallization. This requires identifying small V-CE variations (a few dozen mV). In addition, the thermal swing amplitude of power cycling must be adjusted to achieve a given ageing protocol. This requires measuring junction temperature evolution on a power cycle, which is carried out by means of V-CE measurement at a low current level (100 mA). Experimental results demonstrate the flexibility of this test bench with respect to various power cycling conditions, as well as the feasibility of the proposed on-line monitoring methods. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:81 / 92
页数:12
相关论文
共 31 条
[1]   A Failure-Detection Strategy for IGBT Based on Gate-Voltage Behavior Applied to a Motor Drive System [J].
Antonio Rodriguez-Blanco, Marco ;
Claudio-Sanchez, Abraham ;
Theilliol, Didier ;
Gerardo Vela-Valdes, Luis ;
Sibaja-Teran, Pedro ;
Hernandez-Gonzalez, Leobardo ;
Aguayo-Alquicira, Jesus .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2011, 58 (05) :1625-1633
[2]  
Auerbach F, 1997, IEEE IND APPLIC SOC, P1248, DOI 10.1109/IAS.1997.629019
[3]   Measurement of the transient junction temperature in MOSFET devices under operating conditions [J].
Barlini, D. ;
Ciappa, M. ;
Mermet-Guyennet, M. ;
Fichtner, W. .
MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) :1707-1712
[4]  
Bayerer R., 2008, P IEEE 5 INT C INT P, P37
[5]  
Beczkowski S., 2013, PROC IEEE 15 EUR C P, P1
[6]   Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions [J].
Bouarroudj, M. ;
Khatir, Z. ;
Ousten, J. P. ;
Badel, F. ;
Dupont, L. ;
Lefebvre, S. .
MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) :1719-1724
[7]   Temperature-Level Effect on Solder Lifetime During Thermal Cycling of Power Modules [J].
Bouarroudj, Mounira ;
Khatir, Zoubir ;
Ousten, Jean-Pierre ;
Lefebvre, Stphane .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) :471-477
[8]   Estimation and measurement of junction temperatures in a three-level voltage source converter [J].
Brueckner, Thomas ;
Bernet, Steffen .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (01) :3-12
[9]   Three-level converter topologies with switch breakdown fault-tolerance capability [J].
Ceballos, Salvador ;
Pou, Josep ;
Robles, Eider ;
Gabiola, Igor ;
Zaragoza, Jordi ;
Villate, Jose Luis ;
Boroyevich, Dushan .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2008, 55 (03) :982-995
[10]   Selected failure mechanisms of modern power modules [J].
Ciappa, M .
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :653-667