Nucleation, growth and characterization of cubic boron nitride (cBN) films

被引:119
作者
Zhang, W. J. [1 ]
Chong, Y. M.
Bello, I.
Lee, S. T.
机构
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
CHEMICAL-VAPOR-DEPOSITION; ENERGY ION-IMPLANTATION; HIGH-PRESSURE SYNTHESIS; RF GLOW-DISCHARGE; X-RAY-ABSORPTION; BN THIN-FILMS; C-BN; HIGH-QUALITY; MICROWAVE-PLASMA; SINGLE-CRYSTALS;
D O I
10.1088/0022-3727/40/20/S03
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The advance of science and technology of cBN has however been severely hampered by the poor quality of the material available (random orientation, limited film thickness, poor crystallinity and adhesion with substrates due to a non-cubic BN interlayer). This paper reviews the recent progress in the nucleation, growth and characterization techniques of cBN films. It describes various successful approaches in interface engineering and growth techniques in increasing film thickness, improving crystallinity and adhesion of cBN films to the substrate, which are the major issues hindering cBN films for both mechanical and electronic applications. Based on observations of the surface and interface structures, we further discuss the growth mechanisms of cBN films via physical and chemical routes.
引用
收藏
页码:6159 / 6174
页数:16
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