Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates

被引：8

作者：

Araujo, D. ^{[1
]}

Bustarret, E. ^{[2
]}

Tajani, A. ^{[2
]}

Achatz, P. ^{[2
]}

Gutierrez, M. ^{[1
]}

Garcia, A. J. ^{[1
]}

Villar, M. P. ^{[1
]}

机构：

[1] Univ Cadiz, Dept Ciencia Mat, Puerto Real 11510, Cadiz, Spain

[2] CNRS UJF, Inst Neel, F-38042 Grenoble, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 09期

关键词：

diamond; dislocations; homoepitaxy; transmission electron microscopy; TRANSMISSION ELECTRON-MICROSCOPY; DOPED DIAMOND; SILICON; DAMAGE; FILMS; TEM;

D O I：

10.1002/pssa.201000141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A transmission electron microscopy (TEM) study, comparing homoepitaxial diamond layers grown on different substrate surface preparation states and crystallographic orientation is presented. Quality of epilayers grown on {111} cleaved surface and on {001} polished one is evaluated in terms of crystalline defects. Focused ion beam (FIB-dual beam) sample preparations are observed by TEM using the {111}, {400} and {022} reflections of the [011] pole. Burgers vector analysis allowed to conclude the presence of 60 degrees dislocations oriented along all the different < 110 > directions in the cleaved sample, while no dislocations are observed on the polished one. A complete dislocation analysis is performed for that sample. The presence of dislocations in an undoped (i.e. fully lattice matched) epilayer is surprising; and is probably induced by atomic steps, generated by the cleavage process. This notes down the importance of the substrate if high quality diamond epilayers want to be grown. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2023 / 2028

页数：6

共 15 条

[1] Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction [J].

Alexandre, L. ;

Rousseau, K. ;

Alfonso, C. ;

Saikaly, W. ;

Fares, L. ;

Grosjean, C. ;

Charai, A. .

MICRON, 2008, 39 (03) :294-301

[2] Study of the phosphorus incorporation in n-doped diamond films by cathodoluminescence [J].

Araujo, D ;

Tajani, A ;

Gheeraert, E ;

Bustarret, E .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (02) :S287-S292

[3] HR-TEM imaging and image simulation of vacancy clusters in brown diamond [J].

Barnes, R. ;

Bangert, U. ;

Martineau, P. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (12) :3081-3087

[4] Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond [J].

Derry, T. E. ;

Nshingabigwi, E. K. ;

Levitt, M. ;

Neethling, J. ;

Naidoo, S. R. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (16) :2705-2707

[5] Metal-insulator transition and superconductivity in boron-doped diamond [J].

Klein, T. ;

Achatz, P. ;

Kacmarcik, J. ;

Marcenat, C. ;

Gustafsson, F. ;

Marcus, J. ;

Bustarret, E. ;

Pernot, J. ;

Omnes, F. ;

Sernelius, Bo E. ;

Persson, C. ;

da Silva, A. Ferreira ;

Cytermann, C. .

PHYSICAL REVIEW B, 2007, 75 (16)

[6] Concepts for diamond electronics [J].

Kohn, Erhard ;

Denisenko, Andrej .

THIN SOLID FILMS, 2007, 515 (10) :4333-4339

[7] Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond [J].

Long, Run ;

Dai, Ying ;

Guo, Meng ;

Yu, Lin ;

Huang, Baibiao ;

Zhang, Ruiqin ;

Zhang, Wenjun .

[8] Micro-Raman scattering from undoped and phosphorous-doped (111) homoepitaxial diamond films: Stress imaging of cracks [J].

Mermoux, M ;

Marcus, B ;

Crisci, A ;

Tajani, A ;

Gheeraert, E ;

Bustarret, E .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)

[9] Diamond for bio-sensor applications [J].

Nebel, Christoph E. ;

Rezek, Bohuslav ;

Shin, Dongchan ;

Uetsuka, Hiroshi ;

Yang, Nianjun .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6443-6466

[10] Cross-sectional TEM study of unepitaxial crystallites in a homoepitaxial diamond film [J].

Sawada, H ;

Ichinose, H ;

Watanabe, H ;

Takeuchi, D ;

Okushi, H .

← 1 2 →