Magnetoresistance effect in an organic spin valve

被引：3

作者：

Ren Jun-Feng ^{[1
]}

Wang Yu-Mei ^{[1
]}

Yuan Xiao-Bo ^{[1
]}

Hu Gui-Chao ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 09期

基金：

中国国家自然科学基金;

关键词：

magnetoresistance; organic spintronics; polarons; GIANT MAGNETORESISTANCE; POLARIZED TRANSPORT; SPINTRONICS;

D O I：

10.7498/aps.59.6580

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the spin diffusion theory and the Ohm's law, we theoretically studied the magnetoresistance (MR) effect in an organic spin valve with structure of ferromagnetic/organic semiconductor/ferromagnetic system, which takes into account the special characteristics of organic semiconductors. Self-trapped states, such as spin polarons as well as spinless bipolarons are assumed to be the main carriers in organic semiconductors. From the calculation, it is found that MR ratio increases with the increasing of the polaron proportion and rapidly decreases with the increasing of the organic layer thickness. MR ratio can be enhanced remarkably when the interfacial resistances are spin related. Effects of the conductivity match and the spin polarization of the ferromagnetic layer on the MR are also discussed.

引用

页码：6580 / 6584

页数：5

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