Small- and large-signal measurements of low-temperature GaAs fets

被引：0
|
作者：
Boudart, B
Gaquiere, C
Trassaert, S
Theron, D
Splingart, B
Lipka, M
Kohn, E
机构：
[1] Institut d'Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S. 9929, Département Hyperfréquences et Semiconducteurs, 59652 Villeneuve D'Ascq Cedex, Avenue Poincaré
[2] Universität Ulm, Department of Electron Devices and Circuits, 86069 Ulm
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 12卷 / 02期
关键词：
low-temperature GaAs; power FET; pulse; microwave measurements; electrical passivation;
D O I：
10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature (LT) GaAs FETs have been realized for high I x V products. They have been extensively characterized under dc, rf pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated. Under de conditions I x V products of 2.5 W/mm are obtained. Under microwave frequencies, only 0.4 W/mm were measured on this device. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the device. New device structures are proposed. (C) 1996 John Wiley & Sons, Inc.
引用
收藏
页码：57 / 59
页数：3
相关论文
共 50 条
  • [11] An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
    Crupi, Giovanni
    Vadala, Valeria
    Bosi, Gianni
    Gugliandolo, Giovanni
    Bao, Xiue
    Giofre, Rocco
    Raffo, Antonio
    Colantonio, Paolo
    Donato, Nicola
    Vannini, Giorgio
    2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS 2024, 2024,
  • [12] Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC
    Alim, Mohammad Abdul
    Rezazadeh, Ali A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (04) : 1511 - 1518
  • [13] Correlation of small- and large-signal properties of lead zirconate titanate multilayer actuators
    Kerkamm, I.
    Hiller, P.
    Granzow, T.
    Roedel, J.
    ACTA MATERIALIA, 2009, 57 (01) : 77 - 86
  • [14] Small- and large-signal modeling of InP HBTs in transferred-substrate technology
    Johansen, Tom K.
    Rudolph, Matthias
    Jensen, Thomas
    Kraemer, Tomas
    Weimann, Nils
    Schnieder, Frank
    Krozer, Viktor
    Heinrich, Wolfgang
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2014, 6 (3-4) : 243 - 251
  • [15] Simulation of large-signal behavior of a GaAs low noise amplifier
    Baric, A
    Butkovic, Z
    MELECON 2000: INFORMATION TECHNOLOGY AND ELECTROTECHNOLOGY FOR THE MEDITERRANEAN COUNTRIES, VOLS 1-3, PROCEEDINGS, 2000, : 193 - 196
  • [16] HIGH-FREQUENCY EQUIVALENT-CIRCUIT OF GAAS-FETS FOR LARGE-SIGNAL APPLICATIONS
    BERROTH, M
    BOSCH, R
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (02) : 224 - 229
  • [17] Symmetrical Large-Signal Modeling of Microwave Switch FETs
    Prasad, Ankur
    Fager, Christian
    Thorsell, Mattias
    Andersson, Christer M.
    Yhland, Klas
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (08) : 1590 - 1598
  • [18] PROPOSAL FOR A LARGE-SIGNAL EQUIVALENT-CIRCUIT FOR FETS
    HILBERG, W
    NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1977, 30 (10): : 780 - 783
  • [19] Large-signal modeling method for power FETs and diodes
    Sun Lu
    Wang Jiali
    Wang Shan
    Li Xuezheng
    Shi Hui
    Wang Na
    Guo Shengping
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (06)
  • [20] LARGE-SIGNAL VARACTOR MEASUREMENTS
    AITCHISON, CS
    DAVIES, R
    ELECTRONICS LETTERS, 1970, 6 (24) : 780 - +
12345