High-pressure synthesis and crystal structure of SrGa4As4

被引：0
|
作者：
Weippert, Valentin [1 ]
Johrendt, Dirk [1 ]
机构：
[1] Ludwig Maximilians Univ Munchen, Butenandtstr 5-13, D-81377 Munich, Germany
来源：
ACTA CRYSTALLOGRAPHICA SECTION E-CRYSTALLOGRAPHIC COMMUNICATIONS | 2019年 / 75卷
关键词：
crystal structure; strontium; gallium; arsenic; high-pressure synthesis; PN; PNICTIDES; SR; BA;
D O I：
10.1107/S2056989019013562
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Strontium tetragallate(II,III) tetraarsenide, SrGa4As4, was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 8 GPa and 1573 K. The compound crystallizes in a new structure type (P3(2)21, Z = 3) as a three-dimensional (3D) framework of corner-sharing SrAs8 quadratic antiprisms with strontium situated on a twofold rotation axis (Wyckoff position 3b). This arrangement is surrounded by a 3D framework which can be described as alternately stacked layers of either condensed (GaAs4)-As-III tetrahedra or honeycomb-like layers built up from distorted ethane-like (Ga2As6)-As-II units comprising Ga-Ga bonds.
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页码：1643 / +
页数：8
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