On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene

被引：209

作者：

Ni, Z. H. ^{[1
]}

Ponomarenko, L. A. ^{[1
]}

Nair, R. R. ^{[1
]}

Yang, R. ^{[1
]}

Anissimova, S. ^{[1
]}

Grigorieva, I. V. ^{[1
]}

Schedin, F. ^{[1
]}

Blake, P. ^{[1
]}

Shen, Z. X. ^{[2
]}

Hill, E. H. ^{[1
]}

Novoselov, K. S. ^{[1
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

NANO LETTERS | 2010年 / 10卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

Graphene; mobility; scattering mechanism; Raman; RAMAN-SPECTROSCOPY; TRANSPORT;

D O I：

10.1021/nl101399r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We show chat graphene deposited on a substrate has a non-negligible density of atomic scale defects This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of similar to 1 % with respect to the G peak We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate

引用

页码：3868 / 3872

页数：5

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