Mid-infrared SOI micro-ring modulator operating at 2.02 microns

被引：0
|
作者：
Hagan, David E. [1 ]
Knights, Andrew P. [1 ]
Dow, Liam G. R. [1 ]
机构：
[1] McMaster Univ, 1280 Main St W, Hamilton, ON, Canada
来源：
SILICON PHOTONICS XII | 2017年 / 10108卷
关键词：
Mid-Infrared; Micro-Ring Resonator; Modulation; WAVE-GUIDES; SILICON; PHOTONICS; GERMANIUM;
D O I：
10.1117/12.2250586
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Micro-ring modulators for use in high-speed telecommunication transceivers designed for silicon-on-insulator (SOI) for 2 mu m wavelength operation are described and simulated with comparison to 1.55 mu m. Device simulations show improved DC modulation performance due to the free-carrier effect described in the plasma dispersion relations which is stronger for longer wavelengths. WDM applications are described and simulated. Micro-ring modulator devices were designed and fabricated at A*STAR IME and are pending measurement.
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页数：7
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