Mid-infrared SOI micro-ring modulator operating at 2.02 microns

被引：0

作者：

Hagan, David E. ^{[1
]}

Knights, Andrew P. ^{[1
]}

Dow, Liam G. R. ^{[1
]}

机构：

[1] McMaster Univ, 1280 Main St W, Hamilton, ON, Canada

来源：

SILICON PHOTONICS XII | 2017年 / 10108卷

关键词：

Mid-Infrared; Micro-Ring Resonator; Modulation; WAVE-GUIDES; SILICON; PHOTONICS; GERMANIUM;

D O I：

10.1117/12.2250586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micro-ring modulators for use in high-speed telecommunication transceivers designed for silicon-on-insulator (SOI) for 2 mu m wavelength operation are described and simulated with comparison to 1.55 mu m. Device simulations show improved DC modulation performance due to the free-carrier effect described in the plasma dispersion relations which is stronger for longer wavelengths. WDM applications are described and simulated. Micro-ring modulator devices were designed and fabricated at A*STAR IME and are pending measurement.

引用

页数：7

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