MIM capacitors with HfO2 and HfAIOx for Si RF and analog applications

被引:0
|
作者
Yu, XF [1 ]
Zhu, CX [1 ]
Hu, H [1 ]
Chin, A [1 ]
Li, MF [1 ]
Cho, BJ [1 ]
Kwong, DL [1 ]
Foo, PD [1 ]
Yu, MB [1 ]
机构
[1] Natl Univ Singapore, Dept ECE, SNDL, Singapore 119260, Singapore
来源
MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003 | 2003年 / 766卷
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The MIM capacitors with HfO2 and HfAlOx are investigated for Si RF and analog applications. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. A high capacitance density of 13 fF/mum(2) with a low leakage current and a VCC of 607 ppm/V is obtained for 10 nm HfO2 MIM capacitor, which can meet the requirement of the ITRS roadmap by 2007 for silicon RF application. On the other hand, it was found that both the capacitance density and voltage coefficients of capacitance (VCC) values of the HfAlOx MIM capacitors decrease with increasing Al2O3 concentration. The results show that HfAlOx MIM capacitor with an Al2O3 Mole fraction of 0.14 is optimized. It provides a high capacitance density of 3.5 fF/mum(2) and a low VCC of similar to 140 ppm/V-2. Also, small frequency dependence, low leakage current, and low loss tangent are obtained. Thus, the HfAlOx MIM capacitor with an Al2O3 mole ratio of 0.14 is very suitable for use in silicon analog applications.
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页码:357 / 362
页数:6
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