GaN Schottky Barrier Photodetectors

被引：9
作者：
Chang, S. J. [1 ,2 ]
Wang, S. M. [1 ,2 ]
Chang, P. C. [3 ]
Kuo, C. H. [4 ]
Young, S. J. [5 ]
Chen, T. P. [1 ,2 ]
Wu, S. L. [6 ]
Huang, B. R. [7 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan
[3] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan
[4] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan
[5] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan
[6] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan
[7] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan
来源：
IEEE SENSORS JOURNAL | 2010年 / 10卷 / 10期
关键词：
Nanorod template; noise; photodetector; ultraviolet; LIGHT-EMITTING-DIODES; INGAN-GAN; DETECTORS; MECHANISM; EPITAXY; LAYER; BLUE;
D O I：
10.1109/JSEN.2010.2045889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 x 10(-10) W and 2.26 x 10(9) cmHz(0.5)W(-1), respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 x 10(-6) W and 4.44 x 10(5) cmHz(0.5)W(-1), respectively, for the PD prepared on a conventional sapphire substrate.
引用
收藏
页码：1609 / 1614
页数：6
相关论文
共 20 条
  • [1] Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity
    Biyikli, N
    Kimukin, I
    Aytur, O
    Ozbay, E
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) : 1718 - 1720
  • [2] GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer
    Chang, S. J.
    Lee, K. H.
    Chang, P. C.
    Wang, Y. C.
    Yu, C. L.
    Kuo, C. H.
    Wu, S. L.
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (9-10) : 916 - 921
  • [3] InGaN-GaN multiquantum-well blue and green light-emitting diodes
    Chang, SJ
    Lai, WC
    Su, YK
    Chen, JF
    Liu, CH
    Liaw, UH
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) : 278 - 283
  • [4] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
    Chang, SJ
    Kuo, CH
    Su, YK
    Wu, LW
    Sheu, JK
    Wen, TC
    Lai, WC
    Chen, JF
    Tsai, JM
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 744 - 748
  • [5] Schottky barrier detectors on GaN for visible-blind ultraviolet detection
    Chen, Q
    Yang, JW
    Osinsky, A
    Gangopadhyay, S
    Lim, B
    Anwar, MZ
    Khan, MA
    Kuksenkov, D
    Temkin, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2277 - 2279
  • [6] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
    CHEUNG, SK
    CHEUNG, NW
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 85 - 87
  • [7] Photoconductive gain modelling of GaN photoconductors
    Garrido, JA
    Monroy, E
    Izpura, I
    Munoz, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) : 563 - 568
  • [8] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
  • [9] Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
    Karmalkar, S
    Sathaiya, DM
    Shur, MS
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3976 - 3978
  • [10] Gain mechanism in GaN Schottky ultraviolet detectors
    Katz, O
    Garber, V
    Meyler, B
    Bahir, G
    Salzman, J
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1417 - 1419
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