Dielectric charging in capacitive microelectromechanical system switches with silicon nitride

被引：23

作者：

Koutsoureli, M. ^{[1
]}

Tavassolian, N. ^{[2
]}

Papaioannou, G. ^{[1
]}

Papapolymerou, J. ^{[2
]}

机构：

[1] Univ Athens, Dept Phys, Solid State Phys Sect, Athens 15784, Greece

[2] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期

关键词：

RF-MEMS; SINX-H; RELIABILITY; PECVD; TEMPERATURE; CURRENTS; TRAPS; MODEL;

D O I：

10.1063/1.3560465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper attempts to elaborate on the basic problem of dielectric charging in insulating films for microelectromechanical capacitive switches, the dependence of the film electrical properties on material stoichiometry and the uncertainty of whether the implementation of a leaky dielectric would reduce the charging effects. Silicon nitride films with stoichiometries (N/Si) ranging from 0.36 to 0.85 were assessed in metal-insulator-metal capacitors using the thermally stimulated depolarization current method and by obtaining the current-voltage characteristics. Capacitive switches were also fabricated with the same dielectric films. Results from both devices revealed an enhanced charging in the case of silicon-rich films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560465]

引用

页数：3

共 25 条

[1] Analysis of the power-law response in the fractal dielectric model by thermally stimulated currents and frequency spectroscopy [J].

Bisquert, J ;

Garcia-Belmonte, G .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5657-5662

[2] Structural and optical properties of high density Si-ncs synthesized in SiNx:H by remote PECVD and annealing [J].

Carrada, M. ;

Zerga, A. ;

Amann, A. ;

Grob, J. J. ;

Stoquert, J. P. ;

Slaoui, A. ;

Bonafos, C. ;

Schamm, S. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 147 (2-3) :218-221

[3] Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing [J].

Cen, Z. H. ;

Chen, T. P. ;

Ding, L. ;

Liu, Y. ;

Wong, J. I. ;

Yang, M. ;

Liu, Z. ;

Goh, W. P. ;

Zhu, F. R. ;

Fung, S. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)

[4] Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches [J].

Daigler, Richard ;

Papandreou, Eleni ;

Koutsoureli, Matroni ;

Papaioannou, George ;

Papapolymerou, John .

MICROELECTRONIC ENGINEERING, 2009, 86 (03) :404-407

[5] Electronic structure of memory traps in silicon nitride [J].

Gritsenko, V. A. ;

Nekrashevich, S. S. ;

Vasilev, V. V. ;

Shaposhnikov, A. V. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1866-1869

[6] Short-range order, large-scale potential fluctuations, and photoluminescence in amorphous SiNx [J].

Gritsenko, VA ;

Gritsenko, DV ;

Novikov, YN ;

Kwok, RWM ;

Bello, I .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2004, 98 (04) :760-769

[7] Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation [J].

Lamhamdi, M. ;

Pons, P. ;

Zaghloul, U. ;

Boudou, L. ;

Coccetti, F. ;

Guastavino, J. ;

Segui, Y. ;

Papaioannou, G. ;

Plana, R. .

MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) :1248-1252

[8] Reliability modeling of capacitive RF MEMS [J].

Mellé, S ;

De Conto, D ;

Dubuc, D ;

Grenier, K ;

Vendier, O ;

Muraro, JL ;

Cazaux, JL ;

Plana, R .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) :3482-3488

[9] Dielectric charging in radio frequency microelectromechanical system capacitive switches: A study of material properties and device performance [J].

Papaioannou, G. ;

Papapolymerou, J. ;

Pons, P. ;

Plana, R. .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

[10] Temperature study of the dielectric polarization effects of capacitive RF MEMS switches [J].

Papaioannou, G ;

Exarchos, MN ;

Theonas, V ;

Wang, GA ;

Papapolymerou, J .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) :3467-3473

← 1 2 3 →