Pulsed laser deposition of ZnO thin films on silicon and sapphire

被引：3
|
作者：
Khudobenko, AI [1 ]
Zherikhin, AN [1 ]
Williams, RT [1 ]
Wilkinson, J [1 ]
Ucer, KB [1 ]
Xiong, G [1 ]
Voronov, VV [1 ]
机构：
[1] RAS, Inst Laser & Informat Technol, Troitsk 142190, Moscow Region, Russia
来源：
LASER PROCESSING OF ADVANCED MATERIALS AND LASER MICROTECHNOLOGIES | 2003年 / 5121卷
关键词：
pulsed laser deposition; zinc oxide; photoluminescence;
D O I：
10.1117/12.515618
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated pulsed laser deposition (PLD) of ZnO films on silicon and sapphire substrates. Photoluminescence (PL), electrical properties and crystal structure of films were investigated. Stimulated emission in region 400 nm was observed.
引用
收藏
页码：317 / 324
页数：8
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