A 3 PPM/°C TEMPERATURE COEFFICIENT OF SCALE FACTOR FOR A SILICON RESONANT ACCELEROMETER BASED ON CRYSTALLOGRAPHIC ORIENTATION OPTIMIZATION

被引:0
|
作者
Liu, Mengxia [1 ]
Cui, Jian [1 ]
Li, Dong [1 ]
Zhao, Qiancheng [1 ]
机构
[1] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing, Peoples R China
来源
2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2021年
关键词
Silicon resonant accelerometer; temperature drift; scale factor; crystal orientation optimization;
D O I
10.1109/TRANSDUCERS50396.2021.9495435
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a method for improving the temperature stability of the scale factor for silicon resonant accelerometer (SRA) based on crystallographic orientation optimization for the first time. The approach is a passive compensation per se that changes the temperature drift of Young's modulus via rotating the vibration axis of the device to a specific crystal orientation angle, thereby significantly reducing the temperature coefficient of the scale factor (TCS). Experimental results show that a TCS of 3ppm/degrees C is obtained with a 33.75 degrees orientation SRA without any post-processing compensation, which is similar to 8.6-fold reduced compared with the conventional 0 degrees orientation device and show good agreement with the simulation results. Moreover, the overall variation of the scale factor can be further decreased to only 2.98ppm from-10 degrees C to 70 degrees C after simple polynomial compensation, which is a considerably competitive result among the previously reported results in literatures.
引用
收藏
页码:116 / 119
页数:4
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